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| Double Differential Magneto Resistor FP 410 L (4 x 80) FM Dimensions in mm Features * Double differential magneto resistor on same carrier * Accurate intercenter spacing * High operating temperature range * High output voltage * Compact construction * Available in strip form for automatic assembly Type FP 410 L (4x80) FM FP 410 L (4x80) FM Semiconductor Group 1 Typical applications * * * * Incremental angular encoders Detection of sense of rotation Detection of speed Detection of position Ordering Code Q65410-L80E (taped) Q65110-L80F (singular) 07.96 FP 410 L (4 x 80) FM The double differential magneto resistor assembly consists of two pairs of magneto resistors, (L-type InSb/NiSb semiconductor resistors whose resistance value can be magnetically controlled), which are fixed to a ferrite substrate. Contact to the magneto resistors is achieved using a copper/polyimide carrier film known as Micropack. The basic resistance of each of the magnetic resistors is 80 . The two series coupled pairs of magnetic resistors are actuated by an external magnetic field or can be biased by a permanent magnet and actuated by a soft iron target. Semiconductor Group 2 FP 410 L (4 x 80) FM Maximum ratings Parameter Operating temperature Storage temperature Power dissipation1) Supply voltage2) (B = 0.3 T) Thermal conductivity -attached to heatsink -in still air Characteristics (TA = 25 C) Basic resistance (I 1 mA; B = 0 T) Center symmetry3) Relative resistance change (R = R01-3, R04-6 at B = 0 T) B = 0.3 T4) B=1T Temperature coefficient B=0T B = 0.3 T B=1T Symbol Value - 40 / + 175 - 40 / + 185 1000 8 20 2 Unit C C mW V mW/K TA Tstg Ptot VIN Gth case Gth A R01-3 R04-6 M RB/R0 110...220 6 > 1.7 >7 % - TCR - 0.16 - 0.38 - 0.54 %/K %/K %/K 1) Corresponding to diagram Ptot = f(Tcase) 2) Corresponding to diagram VIN = f(Tcase) 3) M R 01 - 2 - R 02 - = -------------------------------3 x 100% for R01-2 > R02-3 R 01 - 2 R 04 - 5 - R 05 - = -------------------------------6 x 100% for R04-5 > R05-6 R 04 - 5 M 4) 1 T = 1 Tesla = 104 Gauss Semiconductor Group 3 FP 410 L (4 x 80) FM Max. power dissipation versus temperature Ptot = f(T), T = Tcase, TA Maximum supply voltage versus temperature VIN 1-3, 4-6 = f(T), B = 0.3 T Typical MR resistance versus temperature R01-3, 4-6 = f(TA), B = Parameter Typical MR resistance versus magnetic induction B R01-3, 4-6 = f(B), TA = 25 C Semiconductor Group 4 |
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